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| TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS Copyright (c) 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997 q q q q 30 W at 25C Case Temperature 1 A Continuous Collector Current 3 A Peak Collector Current Customer-Specified Selections Available B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING TIP29D Collector-base voltage (IE = 0) TIP29E TIP29F TIP29D Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. TIP29E TIP29F V EBO IC ICM IB Ptot Ptot 1/2LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 160 180 200 120 140 160 5 1 3 0.4 30 2 32 -65 to +150 -65 to +150 250 V A A A W W mJ C C C V V UNIT This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.24 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS JULY 1968 - REVISED MARCH 1997 electrical characteristics at 25C case temperature PARAMETER V (BR)CEO Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio IC = 30 mA (see Note 5) VCE = 160 V V CE = 180 V V CE = 200 V VCE = 90 V VEB = VCE = V CE = 5V 4V 4V VBE = 0 V BE = 0 V BE = 0 IB = 0 IC = 0 IC = 0.2 A IC = IC = IC = 1A 1A 1A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 40 15 0.7 1.3 V V TEST CONDITIONS TIP29D IB = 0 TIP29E TIP29F TIP29D TIP29E TIP29F MIN 120 140 160 0.2 0.2 0.2 0.3 1 mA mA mA V TYP MAX UNIT ICES ICEO IEBO hFE VCE(sat) VBE hfe IB = 125 mA VCE = 4V VCE = 10 V VCE = 10 V IC = 0.2 A IC = 0.2 A |hfe| NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 4.17 62.5 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = 1 A V BE(off) = -4.3 V IB(on) = 0.1 A RL = 30 MIN IB(off) = -0.1 A tp = 20 s, dc 2% TYP 0.5 2 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS JULY 1968 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 1000 VCE = 4 V TC = 25C tp = 300 s, duty cycle < 2% TCS631AD COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 10 TCS631AE IC = 100 mA IC = 300 mA IC = 1 A hFE - DC Current Gain 100 1*0 10 0*1 1 0*001 0*01 0*1 1*0 0*01 0*1 1*0 10 100 1000 IC - Collector Current - A IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1*0 VCE = 4 V TC = 25C VBE - Base-Emitter Voltage - V 0*9 TCS631AF 0*8 0*7 0*6 0*5 0*01 0*1 IC - Collector Current - A 1*0 Figure 3. PRODUCT INFORMATION 3 TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS JULY 1968 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS631AD IC - Collector Current - A 10 tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 1*0 0*1 TIP29D TIP29E TIP29F 10 100 1000 0*01 1*0 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 40 Ptot - Maximum Power Dissipation - W TIS631AB 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. PRODUCT INFORMATION 4 TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS JULY 1968 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 5 TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS JULY 1968 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 6 |
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